Guest Researcher | Spring 2025

Diamond Static Induction Transistor Design and Optimization in TCAD

Ultrawide bandgap (UWBG) semiconductors are predicted by various figures-of-merit to outshine the wide bandgap (WBG) semiconductors such as SiC and GaN in power and radio frequency (RF) electronics. Of the UWBG semiconductors, diamond is highly promising for RF application thanks to the ultra-high breakdown electric field (10 MV/cm), highest thermal conductivity (>2000 W/m-K), and carrier mobility (>2000 cm²/V-s). The goal of this project is to optimize diamond static induction transistor (SIT) structures for high-power RF application. This is done by mapping the device design space in TCAD software Silvaco Atlas and tuning structural parameters to improve amplifier characteristics like power gain and unity gain frequency. Future simulation work should investigate the devices’ thermal response.