FURI | Spring 2024

TCAD Simulation of Diamond Static Induction Transistors for Radio Frequency Power Amplifiers

Ultrawide bandgap (UWBG) semiconductors are predicted by various figures-of-merit to outshine the wide bandgap (WBG) semiconductors such as SiC and GaN in power and radio frequency (RF) electronics. Of the UWBG semiconductors, diamond is highly promising for RF application thanks to the ultra-high breakdown electric field (10 MV/cm), highest thermal conductivity (>2000 W/m-K), and carrier mobility (>2000 cm²/V-s). This project aims to study the performance of diamond Static Induction Transistors (SITs) for RF application using TCAD device simulation in Silvaco Atlas. The impact of various device and material parameters was investigated to study the optimal device design space.