FURI | Fall 2024

Diamond Static Induction Transistors

Ultrawide bandgap (UWBG) semiconductors are predicted by various figures-of-merit to outshine the wide bandgap (WBG) semiconductors such as SiC and GaN in power and radio frequency (RF) electronics. Of the UWBG semiconductors, diamond is highly promising for RF application thanks to the ultra-high breakdown electric field (10 MV/cm), highest thermal conductivity (>2000 W/m-K), and carrier mobility (>2000 cm²/V-s). This project aims to study the performance of diamond Static Induction Transistors (SITs) for RF application and the process for their fabrication. This is done by mapping the device design space in TCAD software Silvaco Atlas experimentally replicating the simulated device structures and characterizing them. Future work should study deviations in device operation under extreme, but application-appropriate, conditions such as radiation, heat, and vibration.