FURI | Spring 2023

Exploring the Physics of Resistive-Switching Behavior in Emerging Two-Dimensional Hexagonal Boron Nitride (2D h-BN) Memristors

The two-dimensional (2D) hexagonal boron nitride (h-BN) memristor is known to “switch” between high to low resistive states through the formation and erasure of conductive filaments between electrodes. Mechanisms behind this filament formation include both metallic diffusion (primarily acting in Ti/h-BN/Au memristors), as well as the forming of boron vacancies (primarily in Au/h-BN/Au memristors) in the h-BN layers when a voltage is swept across the device. To better comprehend how these processes govern “switching,” IV sweep characteristics of both the Ti/h-BN/Au and Au/h-BN/Au devices will be measured across various temperatures, carefully modeled, and ultimately compared.