Timothy Lin
Electrical engineering
Hometown: Phoenix, Arizona, United States
Graduation date: Spring 2027
Additional details: Honors student
FURI | Spring 2025
Design of Beta-Phase Gallium Oxide Junction Barrier Schottky Diodes for Efficient Power Electronics
This research aims to develop techniques to increase the efficiency of Gallium (III) Oxide, or Ga2O3, by testing various well sizes and how they affect the application and power device growth of Ga2O3 to keep up with the development of new technology that requires semiconductors. Ga2O3 has the potential to outperform traditional silicon, or Si, in power electronics due to a larger bandgap and higher critical electric field. Currently, various sizes of junction barriers are tested to determine the lowest breakdown voltage. Plans included varying the material within the junction barrier between N- and P-type semiconductors. Following simulations, these devices will be fabricated in the nanofabrication lab.
Mentor: Houqiang Fu
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