MORE | Fall 2023

Simulation and Fabrication of Trench Schottky Diodes on Ga2O3 for Applications in High Voltage DC Power Conversion

The ultra-wide bandgap (UWBG) semiconductor β-Ga₂O₃ has widely been celebrated during past decade, especially because of its wider bandgap of 4.9eV, high theoretical breakdown field of 8MV/cm and superior Baling’s Figure of Merit (BFOM) of 3444. Moreover, BFOM of β-Ga₂O₃ not only surpasses that of other wider bandgap (WBG) semiconductors like GaN and SiC by a large margin, but it also provides lower on-resistance (R_on) at a given frequency compared to that of other semiconductors. This means more power-efficient devices can be fabricated on β-Ga₂O₃ with relatively low R_on. Fabrication of high aspect ratio trench Schottky diodes using Ga etching technique for applications in DC-DC power conversion. Ga₂O₃ enables the future sustainability needs.