FURI | Spring 2020

Radiation Hardening Test Platform

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The space environment exposes electronics to gamma radiation which disrupts proper circuit functionality if not properly protected against. This research is on a radiation-hardened test structure for a CMOS process, including different MOSFETs, a bandgap voltage reference, and an op-amp under Cobalt-60 gamma radiation up to 1 MRad. Gamma radiation causes the threshold voltage of MOSFETs to shift, thus this research will measure said shift and the performance of the circuits under radiation. It is expected that these circuits will degrade in performance, thus the best design practice for radiation tolerance will be determined based on the measurements.

Student researcher

Liam Anthony Nguyen

Electrical engineering

Hometown: Peoria, Arizona, United States

Graduation date: Spring 2020