FURI | Fall 2024

Quantifying Elemental Diffusion Within Semiconducting Diodes Due to Thermal Stresses

This research aims to find a new way of characterizing material diffusion caused by aging within semiconductor devices. Glass slides coated with oxide-based semiconductor materials are aged via high temperatures to see how the composition of the samples changes over relatively extended periods of time. Elemental diffusion and relative composition of the material are measured using Glow Discharge Optical Emission Spectrometer (GD-OES) and diode properties are measured with capacitance-voltage scans. Additionally, results between aging in air and aging in nitrogen gas will also be compared.