FURI | Fall 2025

Measuring Mobile Ions from Radiation-induced Defects in Perovskite Semiconductors

Traditional semiconductors, such as silicon, are vulnerable to radiation-induced defects. Perovskites offer a low-cost, reliable alternative with potential for radiation-resistant diodes, transistors, and memristors. The mobile ions that are present in the perovskite lattice can cause defect migration and self-heal in response to radiation. The experiment involves measuring mobile ions by analyzing current-voltage characteristics and quantifying ion concentration before and after controlled exposures to radiation using gamma rays, X-rays, and ultraviolet light exposure. This will contribute to uses in space electronics, allowing for perovskites to be used as strong alternatives to traditional semiconductors.