Ahmed Badreldin Nasr
Electrical engineering
Hometown: Phoenix, Arizona, United States
Graduation date: Spring 2026
FURI | Spring 2025
Characterizing Radiation-Induced Ion Defects in Perovskite Semiconductors for Self-Healing in Space Electronics
Traditional semiconductors, such as silicon, are vulnerable to radiation-induced defects. Perovskites offer a low-cost, reliable alternative with potential for radiation-resistant diodes, transistors, and memristors. However, the mobile ions that are present in the perovskite lattice can cause defect migration and self-healing in response to radiation. This research investigates the effects of gamma radiation on perovskite semiconductors by utilizing transient dark current measurements to quantify the concentration of mobile ions. The experiment involves measuring mobile ions by analyzing current-voltage characteristics and ion concentration before and after gamma radiation. This will contribute to uses in space electronics, allowing for perovskites to be used as strong alternatives to traditional semiconductors.
Mentor: Nick Rolston
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