FURI | Spring 2022

Characterization of Synaptic Electronic Devices for Brain-Inspired Computing Systems

The project seeks to address the research question: Is hexagonal boron nitride (h-BN), a layered two-dimensional (2D) material, a promising candidate to implement brain-inspired (neuromorphic) computing devices and circuits? To answer this question, comprehensive electrical measurements and statistical analysis of h-BN memristor (i.e., an electrical device with programmable resistance) will be conducted and analyzed using state-of-the-art semiconductor test equipment. Given that h-BN memristors are currently considered a candidate for implementing artificial synapses, information about their standalone behavior is crucial to their integration into future neuromorphic systems. Therefore, it is important to implement rigorous testing to characterize and investigate the electrical properties of these devices. Future work will include the exploration of h-BN memristor arrays for the implementation of neural networks in hardware.