FURI | Spring 2019

Synthesis of Hexagonal Boron Nitride Thin Films

Hexagonal boron nitride (hBN) is a wide band gap semiconductor with graphene-like structure and characteristics. This material has been identified as a potential candidate for diverse electronic, optoelectronic, nanophotonic and other applications. The goal of this project is to develop a method for synthesizing large domain, single crystalline hBN thin films through precipitation from an iron-chromium alloy solution. Bulk hBN was successfully grown using flux method and crystal identity and quality was confirmed by Raman spectroscopy, and X-ray diffraction. New methods for large scale hBN thin film growth with improved purity, optimized grain size and controlled thickness will be explored.