FURI | Spring 2019
Synthesis of Hexagonal Boron Nitride Thin Films
Hexagonal boron nitride (hBN) is a wide band gap semiconductor with graphene-like structure and characteristics. This material has been identified as a potential candidate for diverse electronic, optoelectronic, nanophotonic and other applications. The goal of this project is to develop a method for synthesizing large domain, single crystalline hBN thin films through precipitation from an iron-chromium alloy solution. Bulk hBN was successfully grown using flux method and crystal identity and quality was confirmed by Raman spectroscopy, and X-ray diffraction. New methods for large scale hBN thin film growth with improved purity, optimized grain size and controlled thickness will be explored.
Materials science and engineering
Hometown: Tempe, Arizona
Graduation date: Spring 2019