FURI | Spring 2019

Synthesis of Hexagonal Boron Nitride Thin Films

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Hexagonal boron nitride (hBN) is a wide band gap semiconductor with graphene-like structure and characteristics. This material has been identified as a potential candidate for diverse electronic, optoelectronic, nanophotonic and other applications. The goal of this project is to develop a method for synthesizing large domain, single crystalline hBN thin films through precipitation from an iron-chromium alloy solution. Bulk hBN was successfully grown using flux method and crystal identity and quality was confirmed by Raman spectroscopy, and X-ray diffraction. New methods for large scale hBN thin film growth with improved purity, optimized grain size and controlled thickness will be explored.

Student researcher

Portrait of Pranvera Gorenca

Pranvera Kolari

Materials science and engineering

Hometown: Tempe, Arizona

Graduation date: Spring 2019