FURI | Spring 2026

Silvaco-Based Simulation and Performance Analysis of AlN FinFET Devices for High-Power Applications

This research investigates the performance of an AlN/AlGaN-based FinFET device structure using SILVACO TCAD simulation tools. The device incorporates a fin architecture with engineered AlN/AlGaN layers, optimized doping profiles, and metal contacts to study carrier transport and electrostatic control. Key metrics such as current density, leakage, and breakdown behavior are evaluated to assess performance and scalability. The study emphasizes design approaches compatible with advanced fabrication processes, supporting the development of reliable, high-efficiency wide-band gap devices for next-generation semiconductor technologies.