FURI | Spring 2026

Pioneering Sputtering Routes for High-Mobility Bi2O2Se Thin Films on Sapphire

This project investigates RF magnetron sputtering as a scalable, transfer free method for growing Bi2O2Se thin films on sapphire. Growth parameters, including temperature, oxygen partial pressure, argon partial pressure, total pressure, RF power, deposition time, presputtering time, and target substrate distance, will be systematically varied to identify conditions that produce high quality films. X-ray diffraction (XRD) and Raman spectroscopy will serve as the primary techniques to evaluate crystallinity and phase formation, while scanning electron microscopy (SEM) will be used selectively to assess surface morphology. The goal is to establish a reproducible growth process for high quality thin films.