Guest Researcher | Spring 2025

Modeling of Space Modulated Junction Termination Extensions for High Performance NiO/β-Ga₂O₃ Heterojunction Devices

β-Ga2O3 is a promising material for next-generation power devices due to its 4.8 eV ultra-wide bandgap and 8 MV/cm critical electric field. However, β-Ga2O3 devices face performance limitations from poor interfaces, crystal defects, and electric field crowding. Techniques like field plates and mesa structures help modulate edge electric fields but lack a wide process window for commercial use. This study explores Space-Modulated Junction Termination Extension (SM-JTE) for NiO/β-Ga2O3 heterojunction diodes, aiming to optimize edge termination and establish a manufacturable process. The findings contribute to the development of β-Ga2O3 devices for commercial power electronics.