FURI | Spring 2026

Impact of Transfer Methods on 2D Semiconductor Device Performance

Transferring 2D semiconductor films from their native growth substrates onto target substrates is a critical step in 2D electronics, as it directly impacts material integrity and device performance. This project compares different transfer methods for tungsten diselenide (WSe₂), focusing on contamination, defect formation, and film degradation. Raman spectroscopy and atomic force microscopy (AFM) were used to evaluate film quality before and after transfer. Results show that quasi-dry methods produce more consistent transfers with fewer defects, while other approaches were less reliable and often resulted in film damage or incomplete transfer.