FURI | Fall 2025

Identifying Current Transport Mechanisms in Oxide-based RRAM for Reliability Investigation

Oxide-based resistive random-access memory (RRAM) is a promising candidate for applications in emerging memory technologies due to its fast switching speeds, low power, and high density. The current transport mechanisms in RRAM are important for understanding device behavior and for endurance and reliability testing. This research project seeks to identify the underlying transport mechanisms in oxide-based RRAM in order to improve device performance. By generating and analyzing the I-V curves of these devices, the research team will be able to characterize and test these devices at probe stations for performance evaluation and error analysis. Selectorless RRAM is one of the most prominent emerging memory candidates toward high-density memory array and AI, according to its intrinsic self-rectifying behaviors. Experimental results of Pt/HfOx/SiOx/TiN selectorless RRAM will be concluded with the current transport mechanisms for its nonlinear behaviors. This will contribute to the development of neural networks and other memory applications.