FURI | Spring 2024

Hafnium Contacts for n-type Conducting Nanocrystalline Diamond

FURI Semiconductor Research theme icon

Tri-layer metal contacts consisting of hafnium, platinum, and gold were deposited on n-type conducting nanocrystalline diamond by electron beam evaporation and patterned by a bi-layer lift-off process. Samples were then annealed at 800℃ to promote the formation of hafnium carbide at the interface in order to improve adhesion and lower contact resistance. Circular transfer length method (cTLM) measurements were performed to evaluate the performance of the contacts, and results indicated ohmic behavior and low contact resistivity.

Student researcher

Carson Paul Gockley

Electrical engineering

Hometown: Phoenix, Arizona, United States

Graduation date: Fall 2024