FURI | Spring 2026

Exploring the effect of seed layer lattice mismatch on the crystallization behavior of metallic glass NiTi films

NiTi thin films are widely used in micro-electro-mechanical systems (MEMS) for their special properties like shape-memory effect. However they require high-temperature annealing (~450 °C) to crystallize and exhibit shape memory, which limits their use in many applications. This project investigates whether by using body-centered cubic (BCC) metal seed layers we can reduce the crystallization temperature (TX) of amorphous NiTi films. NiTi films and seed layers are deposited via magnetron sputtering and temperature-dependent electrical resistivity measurements are used to determine TX . This research aims to establish a relationship between the lattice strain mismatch between seed layers and NiTi and crystallization behavior. A successful completion of this work will enable lower processing temperatures and expand the applicability of NiTi films in many applications.