FURI | Spring 2026

Endurance Cycling of 3D Halide Perovskite Memristors Investigating Degradation Mechanisms and Electrode Dependence

Traditional semiconductor memristors face challenges in balancing performance, stability, and affordability. Halide perovskites offer a promising alternative due to their tunable electronic properties and low cost fabrication. While previous work has demonstrated resistive switching in 3D perovskite thin films with various top electrode configurations, the cycling stability of these devices requires further research. This project investigates the endurance limits of 3D perovskite based memristors by subjecting devices with silver or carbon top electrodes to repeated write-erase cycles. We track degradation in switching voltages and resistance states to determine the cyclability limits and identify failure mechanisms.