FURI | Spring 2026

From Bi2O2Se to Bi2Se(3-X)TeX: Utilizing CVD for Phase Transitions and Chalcogen Tuning

As conventional silicon-based devices approach their physical scaling limits, demand for alternative semiconducting materials with tunable electronic properties, such as Bi₂O₂Se, has increased significantly. This work investigates phase transitions within the Bi-O-Se-Te material system using chemical vapor deposition (CVD) with the goal of enabling chalcogen alloying and thus bandgap tuning.  By adjusting systematic growth parameters, the phase transition from PLD-grown thin film Bi₂O₂Se to Bi₂Se_(3-X)Te_X was achieved through controlled selenization and tellurization processes, allowing for partial integration of tellurium into the crystal lattice. The findings were confirmed through both XRD and Raman spectroscopy and provide important insight into the phase transition mechanisms necessary for future 2D semiconductor design.